Electronic device and process achieving a reduction in alpha particle emissions from boron-based compounds essentially free of boron-10
US5395783A · kind A · utility
19Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 16, 1993 |
| Grant date | Mar 7, 1995 |
| Priority date | — |
| Expiry date | Feb 16, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/953
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Reduced soft errors in charge-sensitive circuit elements such as volatile memory cells 200 occur by using boron-11 to the exclusion of boron-10 or essentially free of boron-10 in borosilicate glass 230, 240 deposited on the substrate 206 directly over the arrays of memory cells. Boron-10 exhibits a high likelihood of fission to release a 1.47 MeV alpha particle upon capture of a naturally occurring cosmic ray neutron. This capture occurs frequently in boron-10 because of its high neutron capture cross-section. Boron-11 does not fission.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.