Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy
US5395791A · kind A · utility
147Cited by
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20Claims
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Key dates
| Filing date | Oct 20, 1993 |
| Grant date | Mar 7, 1995 |
| Priority date | — |
| Expiry date | Oct 20, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0125
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for using atomic layer epitaxy (ALE) and/or migration enhanced epitaxy (MEE) to grow high efficiency quantum wells in II-VI laser diodes. The substrate and previously grown layers of the laser diode are heated to a temperature less than or equal to about 200.degree. C. in an MBE chamber. Sources of Cd, Zn, and Se are injected alternately into the chamber to grow a short-period strained-layer superlattice (SPSLS) quantum well layer including overlaying monolayers of Cd, Zn and Se. The quantum well layer is described by the notation [(CdSe).sub.m (ZnSe).sub.n ].sub.p where m, n and p are integers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.