Process for fabricating a semiconductor laser device

US5395792A · kind A · utility

Assignee

• Rohm Co., Ltd. · JP

Inventors

• Katsuhiko Ikawa · Kyoto, JP
• Hiroshi Matagi · Kyoto, JP

Key dates

• Filing date: Jun 1, 1994
• Grant date: Mar 7, 1995
• Expiry date: Jun 1, 2014

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/095
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

There is provided a process for fabricating a highly reliable semiconductor laser device operable at a low current with an increased yield, which process includes the steps of: (a) forming a lower clad layer on a semiconductor substrate; (b) forming an active layer of a material larger in refractive index and smaller in forbidden band width than the lower clad layer; (c) forming a first upper clad layer of a material smaller in refractive index and larger in forbidden band width than the active layer; (d) forming an etch stop layer made of GaAs on the first upper clad layer; (e) forming a current-blocking layer of a material smaller in refractive index and larger in forbidden band width than the first upper clad layer; (f) forming a stripe cavity by etching at least a portion of the current-blocking layer down to the etch stop layer; (g) evaporating the etch stop layer remaining in the stripe cavity; (h) forming a second upper clad layer of a material smaller in refractive index and larger in forbidden band width than the active layer while larger in refractive index and smaller in forbidden band width than the current-blocking layer; and (i) forming a contact layer of a material l…