Method of bandgap tuning of semiconductor quantum well structures
US5395793A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1993 |
| Grant date | Mar 7, 1995 |
| Priority date | — |
| Expiry date | Dec 23, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3414
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of selectively tuning the bandedge of a semiconductor heterostructure includes repeatedly forming a disordered region that is spatially separated from a quantum well active region and subsequently annealing the heterostructure each time after the disordered region is formed, so that vacancies/defects in the disordered region diffuse into the quantum well region and enhance interdiffusion at the well-barrier heterojunctions. Repeating, the disordering followed by annealing allows for a greater range in bandgap tuning. The heterostuctures of interest are IH-V material systems, such as AlGaAs/GaAs, where the active region includes structures such as a single quantum well, a multiple quantum well, or a superlattice.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.