Thin film transistor device having driving circuit and matrix circuit
US5396084A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 2, 1993 |
| Grant date | Mar 7, 1995 |
| Priority date | — |
| Expiry date | Jun 2, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
Abstract
A thin film semiconductor device comprises a matrix circuit portion and a peripheral circuit portion. An NMOS thin film transistor included in the peripheral circuit portion comprises as an active layer a polysilicon thin film formed on a substrate, leading to a high on-current and an improved switching speed, compared with a thin film transistor including as an active layer of a polysilicon thin film which is obtained by crystallizing an amorphous silicon thin film. An NMOS thin film transistor included in the matrix circuit portion also comprises as an active layer a polysilicon thin film which is formed on the substrate. However, the gate insulating film of an NMOS thin film transistor in the matrix circuit portion as a whole is made thicker than that in the NMOS thin film transistor included in the peripheral circuit portion because of the presence of a first interlayer insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.