MOS type semiconductor device having a high ON current/OFF current ratio
US5396099A · kind A · utility
11Cited by
3References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 21, 1991 |
| Grant date | Mar 7, 1995 |
| Priority date | — |
| Expiry date | Nov 21, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/674
Abstract
A MOS type semiconductor device includes a thin-film semiconductor, a gate oxide film, and a gate. The thin-film semiconductor has a drain region, a source region, and a channel region arranged between these two regions. The gate oxide film is formed on the thin-film semiconductor. The gate is formed in correspondence with the channel region via the gate oxide film. The thin-film semiconductor is formed such that the film thickness of the drain region and the source region is made smaller than the film thickness of the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.