MESFET mixer circuit having a pulse doped structure
US5396132A · kind A · utility
7Cited by
10References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 2, 1993 |
| Grant date | Mar 7, 1995 |
| Priority date | — |
| Expiry date | Mar 2, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03D7/125
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An FET mixer circuit having a stable input impedance uses two tandem-connected GaAs MESFET's (1) and (2) of pulse doped structure instead of a conventional MESFET or a HEMT, as an active device. A gate biasing point for the FET (1) is set around a pinch-off point of a mutual conductance, and a gate biasing point for the FET (2) is set in a region which assures non-change of a mutual conductance with respect to the increase of a gate voltage. Thus, a mixer circuit having a good isolation characteristic for an RF signal and a local oscillation signal and exhibits substantially no change in the input impedance is attained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.