Method of manufacturing thin film transistor
US5397718A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 1993 |
| Grant date | Mar 14, 1995 |
| Priority date | — |
| Expiry date | Feb 19, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/15
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a thin film transistor, when impurity ions are introduced in a channel region between source and drain regions in a semiconductor layer, an insulator layer is first formed on the semiconductor layer. Then, impurity ions generated on high frequency discharge are introduced through the insulator layer into the semiconductor layer under a specified acceleration voltage. Then, the introduction depth of impurities and the amount of the impurities to be introduced in the channel region can be controlled or the threshold voltage of the thin film transistor can be controlled. This method can be applied to a large substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.