Method of making MOS transistor having improved oxynitride dielectric
US5397720A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 1994 |
| Grant date | Mar 14, 1995 |
| Priority date | — |
| Expiry date | Jan 7, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/112
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High quality ultrathin gate oxides having nitrogen atoms therein with a profile having a peak at the silicon oxide-silicon interface are formed by oxidizing a surface of a monocrystalline silicon body in an atmosphere of nitrous oxide (N.sub.2 O) at a temperature above 900.degree. C. preferably in the range of 900.degree.-1100.degree. C., and then heating the silicon body and oxidized surface in an atmosphere of anhydrous ammonia to introduce additional nitrogen atoms into the oxide and increase resistance to boron penetration without degrading the oxide by charge trapping. The resulting oxynitride has less degradation under channel hot electron stress and approximately one order of magnitude longer lifetime than that of conventional silicon oxide in MIS applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.