Method for accurate growth of vertical-cavity surface-emitting lasers
US5397739A · kind A · utility
13Cited by
2References
19Claims
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Key dates
| Filing date | Jul 26, 1993 |
| Grant date | Mar 14, 1995 |
| Priority date | — |
| Expiry date | Jul 26, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18358
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
We report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, we can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.