Method for p-type doping of semiconductor structures formed of group II and group VI elements
US5398641A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 27, 1993 |
| Grant date | Mar 21, 1995 |
| Priority date | — |
| Expiry date | Jul 27, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus (10) for forming a p-doped layer (68, 80, 92) of Group II and Group VI elements by molecular beam epitaxial process in which a nitrogen dopant is introduced as the layer (68, 80, 92) is being grown. In one embodiment, molecular nitrogen is passed through a plasma generator (46) for converting it to activated nitrogen, and the activated nitrogen is conducted through an elongated guide tube (50) toward the substrate (66) upon which a Group II-Group VI layer (68, 80, 92) is being grown. In one embodiment, an n-type dopant source (72) is also provided, the apparatus (10) being operable for forming electrical devices (86, 88) having successive layers (78, 80, 90, 92, 94) of differing electrical characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.