Process for producing a phosphor layer by reacting a doped substance with silica
US5399185A · kind A · utility
9Cited by
6References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 15, 1993 |
| Grant date | Mar 21, 1995 |
| Priority date | — |
| Expiry date | Dec 15, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/32
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A doped starting substance is applied to a substrate composed of SiO.sub.2 glass. A phosphor layer is formed by reaction of the starting substance with SiO.sub.2 of the substrate to form a silicate of the starting substance. This reaction is carried out in a heat-treatment process in an oxygen-containing atmosphere. Zn or Gd is preferably used as starting substance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.