Apparatus for plasma treatment
US5399254A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 1991 |
| Grant date | Mar 21, 1995 |
| Priority date | — |
| Expiry date | Feb 22, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32596
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention concerns an apparatus for the plasma treatment of substrates in a plasma discharge excited by a high frequency between two electrodes 3, 8 to which power is supplied by a high frequency source, where the first electrode is configured as a hollow electrode 3 and the second one as an electrode 8 holding a substrate 7 and situated upstream of the hollow chamber 10 of the first electrode which it also passes. The hollow electrode is enclosed by a dark space shield and has an edge pointing in direction of the second electrode and also has projection located between the edge. These projections are on the same potential as the second electrode. The radio frequency power is thus decoupled from the substrate bias voltage (selfbias) and the distance between the first and the second electrode can be changed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.