Method for manufacturing a multiple walled capacitor of a semiconductor device
US5399518A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 1993 |
| Grant date | Mar 21, 1995 |
| Priority date | — |
| Expiry date | Jul 15, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A method for manufacturing a double-cylindrical storage electrode of a capacitor of a semiconductor memory device, utilizes an outer etching mask for forming an outer cylinder and an inner etching mask for forming an inner cylinder. After forming a conductive structure on a semiconductor substrate, an outer etching mask for forming an outer cylinder and an inner etching mask for forming an inner cylinder are formed on the conductive structure. Then, the conductive structure is anisotropically etched using the outer and inner etching masks, thereby forming a double-cylindrical first electrode. Since a double-cylindrical storage electrode can be obtained from a single conductive layer, the influence of native oxidation circumvented. In addition, the double-cylindrical storage electrode of the capacitor according to the present invention decreases the risk of structural fragmenting because the electrode is obtained from one material layer, instead of a combination of layers as is conventionally-known. Also, the storage electrode of the present invention has no sharp edges, so that leakage current can be minimized or avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.