Plasma treatment apparatus
US5399830A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 11, 1994 |
| Grant date | Mar 21, 1995 |
| Priority date | — |
| Expiry date | Jan 11, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32697
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electromagnetic coil and the microwave generating source are provided so that the ECR discharge occurs to the reactive gas within the reaction chamber by generating a magnetic field in the reaction chamber and by introducing the microwave into it, for generating plasma. The sample table for placing the wafer is installed within the reaction chamber, on which wafer treatment like etching is effected by the plasma generated within the reaction chamber. The reaction chamber includes a first portion and a second portion which is insulated from the first portion by an insulating portion. The first portion and the second portion are structured so that the potential difference is applied by way of the power supply.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.