High-temperature Josephson junction and method
US5399881A · kind A · utility
19Cited by
3References
18Claims
0Family size
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Inventors
Key dates
| Filing date | Apr 30, 1993 |
| Grant date | Mar 21, 1995 |
| Priority date | — |
| Expiry date | Apr 30, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/729
Abstract
A hysteretic high-T.sub.c trilayer Josephson junction, and a method of forming the same are disclosed. The junction includes lower and upper high T.sub.c superconducting cuprate films separated by a barrier layer, where the thin films each include a molecular junction layer adjacent the barrier layer which is characterized by a high-T.sub.c cuprate stoichiometry and crystal structure, and a flat two-dimensional surface, as evidenced by its electron diffraction pattern using reflected high-energy electron diffraction. The junction and barrier layers in the junction are formed by atomic layer-by-layer deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.