FET with a T-shaped gate of a particular structure
US5399896A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 27, 1993 |
| Grant date | Mar 21, 1995 |
| Priority date | — |
| Expiry date | Oct 27, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/015
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a T-shaped gate electrode of a semiconductor device including forming an insulating film on a semiconductor substrate, etching away a prescribed portion of the insulating film, depositing a metal film having a prescribed thickness, forming a first photoresist film and removing the photoresist film except where the insulating film has been removed, forming a second photoresist film, patterning the second photoresist film to expose the metal film along a side wall of the insulating film, etching away a portion of the metal film using the first and second photoresist films as a mask, depositing a gate metal and removing the first and second photoresist films and overlying gate metal by lift-off, and etching away the metal films remaining on the semiconductor substrate and the insulating film. Thereby, a T-shaped gate electrode with shortened length is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.