Isolation region in a group III-V semiconductor device and method of making the same
US5399900A · kind A · utility
8Cited by
2References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 1993 |
| Grant date | Mar 21, 1995 |
| Priority date | — |
| Expiry date | Oct 8, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7605
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having in a body of a group III-V semiconductor material at least one isolation region which is stable at temperatures up to about 900.degree. C. The isolation region is formed of ions of a group III or V element which are implanted into the body and then thermally annealed at a temperature of between 650.degree. C. and 900.degree. C. This provides the regions with voids which remove free carriers and makes the region highly resistive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.