Plasma reactor for performing an etching or deposition method
US5401318A · kind A · utility
7Cited by
5References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 16, 1994 |
| Grant date | Mar 28, 1995 |
| Priority date | — |
| Expiry date | Aug 16, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/46
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma reactor for performing an etching or deposition method, said reactor including a vacuum enclosure designed to receive a substrate to be treated, and including means for inserting a gas to be ionized, the plasma, which is produced in a container, being excited by an antenna fed by a radio-frequency power generator, wherein said antenna is composed of an electrical conductor that constitutes a single circular loop having two diametrically-opposite points connected to feed conductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.