Dry etching method
US5401357A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 1992 |
| Grant date | Mar 28, 1995 |
| Priority date | — |
| Expiry date | Sep 1, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method may be used to dry etch a sample including a plurality of regions different from each other in the photo-absorption of a light having a specified wavelength using an etching gas plasma. The method is capable of selectively etching the desired material from a plurality of materials having different types of band gap energies or from a plurality of materials having different band gap energies. The method includes a step of irradiating a light having the specified wavelength on the sample for reducing an etching rate of a region having a large photo-absorption coefficient to the light, thereby selectively etching a region having a small photo-absorption coefficient to the light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.