Field-effect device with a superconducting channel
US5401714A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 1994 |
| Grant date | Mar 28, 1995 |
| Priority date | — |
| Expiry date | May 4, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/873
Abstract
A field-effect structure formed on a substrate and comprising a channel with source and drain as well as a gate that is separated from the channel by an insulating layer. The channel is made of a high T.sub.c metal-oxide superconductor, e.g., YBaCuO, having a carrier density of about 10.sup.21 /cm.sup.3 and a correlation length of about 0.2 nm. The channel thickness is preferrable in the order of 1 nm. The superconductor is preferably a single crystalline and oriented such that the superconducting behavior is strongest in the plane parallel to the substrate. With a signal of a few volts applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched between a "zero resistance" (undepleted, superconducting) state and "very high resistance" (depleted state).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.