Method of writing data into and erasing the same from semiconductor nonvolatile memory
US5402371A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 7, 1993 |
| Grant date | Mar 28, 1995 |
| Priority date | — |
| Expiry date | Oct 7, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/683
Abstract
The present invention provides a method of writing data into and erasing it from a semiconductor nonvolatile memory having two diffusion layers formed in a semiconductor substrate, a floating gate formed on a layer between the two diffusion layers, a control gate and a select gate formed on a side portion of the control gate. The method is achieved by applying a potential enabling a channel to be formed between the two diffusion layers to the control gate, applying a potential preventing the channel from being formed therebetween to the select gate, injecting an electric charge into the floating gate without causing current to flow between the diffusion layers and writing data into the semiconductor nonvolatile memory. Thus, when such a method is used, the semiconductor nonvolatile memory can be operated with low energy and the number of times in which the data is reloaded or rewritten can be made greater.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.