Ultra-high vacuum/chemical vapor deposition of epitaxial silicon-on-sapphire
US5402749A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 1994 |
| Grant date | Apr 4, 1995 |
| Priority date | — |
| Expiry date | May 3, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/967
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating epitaxial thin films, such as doped films or silicon-on-sapphire films, relies upon ultrahigh vacuum vapor deposition. The method calls for a preparing of an ultrahigh vacuum chamber to reduce water and oxygen pressure to below 10.sup.-10 Torr. At at least one sapphire substrate is placed in the ultrahigh vacuum chamber and is purged in the chamber with about 600 sccm hydrogen for about 5 minutes. A silicon film or a doped film is deposited on the sapphire substrate at temperatures between about 700 and 850.degree. C. with base pressures between about 1.0 and 2.0.mu. and gas flow rates of about 2.0 sccm SiH.sub.4 and 20 sccm H.sub.2 for about 30 minutes to provide an about 1000 .ANG. thick silicon film, or, doped film, on the sapphire substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.