Method and apparatus for monitoring layer processing
US5403433A · kind A · utility
71Cited by
23References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 3, 1993 |
| Grant date | Apr 4, 1995 |
| Priority date | — |
| Expiry date | Sep 3, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/59
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The method and apparatus of the invention permit in situ determinations to be made of the temperature and optical constants of a substrate surface that is being treated, by measurements of radiance, reflectance and transmittance. These determinations in turn provide, at any given instant during processing, compositional and other information, thereby affording highly effective feedback control of the processing conditions. The apparatus comprises an integrated, small and relatively inexpensive instrument for process monitoring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.