Catalysis in organometallic CVD of thin metal films
US5403620A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 13, 1992 |
| Grant date | Apr 4, 1995 |
| Priority date | — |
| Expiry date | Oct 13, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/44
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for CVD including plasma enhanced and laser induced CVD using one or more precursor film forming metal compounds as the major film forming metal precursor, for example organotungsten, which is admixed with minor amounts of a precursor catalytic metal compound, for example, an organoplatinum compound, as a precursor to a catalytic metal in the presence of hydrogen gas to provide improved purity of deposited metal films having residual amounts of the catalytic metal incorporated therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.