Buried ridge II-VI laser diode
US5404027A · kind A · utility
39Cited by
24References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 12, 1993 |
| Grant date | Apr 4, 1995 |
| Priority date | — |
| Expiry date | Feb 12, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8162
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A buried-ridge or buried-heterostructure II-VI laser diode. Polycrystalline II-VI semiconductor such as ZnS, ZnSSe, ZnSe or CdS deposited by vacuum evaporation buries the etched ridge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.