Method of making a storage electrode of DRAM cell
US5405799A · kind A · utility
17Cited by
5References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 20, 1993 |
| Grant date | Apr 11, 1995 |
| Priority date | — |
| Expiry date | Oct 20, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/318
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A storage electrode of a DRAM cell in a highly-integrated semiconductor device has, in order to secure the surface area thereof greater than that of a conventional tunnel-type storage electrode, an upper plate of storage electrode formed over a lower plate of storage electrode separated therefrom by a predetermined distance, while interposing bars of various shapes formed of a conductive layer to electrically connect the upper and lower plates, and a method for manufacturing the storage electrode is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.