Process of fabricating a semiconductor substrate
US5405802A · kind A · utility
134Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 25, 1994 |
| Grant date | Apr 11, 1995 |
| Priority date | — |
| Expiry date | May 25, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/249967
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for preparing a semiconductor substrate comprises a step of porousifying a silicon monocrystalline substrate to form a porous layer, a step of making a silicon monocrystalline thin film to epitaxially grow on a surface of the porous layer, a step of oxidizing the surface of the epitaxial growth layer, a step of forming a deposited film on the oxidized surface, thereby obtainig a first substrate, a step of closely contacting the deposited film of the first substrate to a second substrate, a step of heat treating the closely contacted substrates and a step of selectively etching the porous layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.