MOSFET circuit with separate and common electrodes
US5406104A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 1994 |
| Grant date | Apr 11, 1995 |
| Priority date | — |
| Expiry date | Jan 14, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
Abstract
A transistor circuit such as an integrated circuit contains at least first and second MOS transistors having drain electrode pair and source electrode pair, one of which is a pair of electrodes connected together and integrated into a common drain or source electrode, and the other of which is a pair of separate electrodes. In a semiconductor substrate, there are formed at least one common region, such as a drain contact region or a source region, connected with the common electrode, and a plurality of first and second individual regions selectively connected with the separate electrodes. Around the common region or each common region, a predetermined number of the individual regions are arranged in such a manner as to improve the thermal balance of the substrate and enable the downsizing of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.