Semiconductor Bi-MIS device and method of manufacturing the same
US5406106A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 1993 |
| Grant date | Apr 11, 1995 |
| Priority date | — |
| Expiry date | Jun 15, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
Abstract
A silicon oxide film as a dielectric film and a silicon nitride film or a polysilicon film as a protection film for the silicon oxide film are formed on a silicon substrate. After the two films are selectively etched to form contact holes of a bipolar transistor, a polysilicon film as a conductive film is laid on the entire substrate and selectively etched to form electrodes. In a MIS transistor, the protection film of the silicon nitride film serves as a gate insulator film and the protection film of the polysilicon film serves as a gate electrode. Accordingly, contamination to the gate insulator film at formation of contact holes of the bipolar transistor is prevented, and an excellent semiconductor with Bi-MOS structure is manufactured with low cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.