Thin film capacitor and method of manufacturing the same
US5406445A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 1994 |
| Grant date | Apr 11, 1995 |
| Priority date | — |
| Expiry date | Mar 24, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal electrode are sequentially laminated on a metal electrode, thus providing a thin film capacitor. Or alternatively, a thin film capacitor is manufactured by sequentially laminating a NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a platinum thin layer as a lower electrode oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal thin layer as an upper electrode on a substrate. A plasma-enhanced CVD method is applied to form a NaCl oxide thin layer, a spinel oxide thin layer and a perovskite dielectric thin layer while a vacuum deposition method, a sputtering method, a CVD method or a plasma-enhanced CVD method is applied for the formation of a metal electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.