Periodic dielectric structure for production of photonic band gap and method for fabricating the same
US5406573A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 1993 |
| Grant date | Apr 11, 1995 |
| Priority date | — |
| Expiry date | Nov 12, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/1225
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for fabricating a periodic dielectric structure which exhibits a photonic band gap. Alignment holes are formed in a wafer of dielectric material having a given crystal orientation. A planar layer of elongate rods is then formed in a section of the wafer. The formation of the rods includes the step of selectively removing the dielectric material of the wafer between the rods. The formation of alignment holes and layers of elongate rods and wafers is then repeated to form a plurality of patterned wafers. A stack of patterned wafers is then formed by rotating each successive wafer with respect to the next-previous wafer, and then placing the successive wafer on the stack. This stacking results in a stack of patterned wafers having a four-layer periodicity exhibiting a photonic band gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.