Cast dopant for crystal growing
US5406905A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 1993 |
| Grant date | Apr 18, 1995 |
| Priority date | — |
| Expiry date | May 28, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/911
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A dopant (76), such as antimony, is cast around a seed crystal (10) to form a seed-dopant assembly (14) that facilitates doping of a molten semiconductor (36), such as silicon, in a crystal-growing furnace (34). To grow a doped ingot, the seed-dopant assembly is held in a relatively cool part of the furnace while the semiconductor is melted. When the semiconductor melt is ready for doping, the seed-dopant assembly is lowered to a position just above the melt. Heat transferred to the seed dopant assembly from the melt causes the dopant to drop off the seed into the molten semiconductor without splashing and without immersing the seed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.