Transparent conductors comprising gallium-indium-oxide
US5407602A · kind A · utility
16Cited by
2References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 27, 1993 |
| Grant date | Apr 18, 1995 |
| Priority date | — |
| Expiry date | Oct 27, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/13439
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Applicant has discovered that aliovalently doped gallium-indium-oxide (GaInO.sub.3) can achieve electrical conductivity comparable to wide band-gap semiconductors presently in use while exhibiting enhanced transparency and improved index matching. The material can be doped to resistivity of less than 10 milliohm-cm by small quantities of aliovalent dopants, such as tetravalent atoms. It has a refractive index of about 1.6 and can be deposited on glass substrates in polycrystalline films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.