Method of forming resist pattern in a multilayer resist
US5407782A · kind A · utility
8Cited by
2References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 2, 1992 |
| Grant date | Apr 18, 1995 |
| Priority date | — |
| Expiry date | Sep 2, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/168
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A multilayer photoresist includes an X-ray photoresist layer photosensitibe to X rays formed on a substrate, and a photoresist layer containing an X-ray absorbing agent formed on the X-ray photoresist layer. When the multilayer photoresist is selectively exposed to, for example, an I line (one spectrum), and developed, a mask to be used in the subsequent exposure to X rays is formed in the photoresist layer containing the X-ray absorbing agent. The X-ray photoresist layer on the substrate is then exposed to X rays by using the mask formed in the photoresist layer, and is developed, a resist pattern is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.