Method for fabricating a semiconductor device having a shallow doped region
US5407847A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 1993 |
| Grant date | Apr 18, 1995 |
| Priority date | — |
| Expiry date | Sep 20, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/965
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for the formation of ultra-shallow boron doped regions in a semiconductor device. In one embodiment of the invention an N-type semiconductor substrate (15) is provided having a first P-type region formed therein. A dielectric layer (16) is formed on the substrate surface and a material layer (17) doped with fluorinated boron is formed on the dielectric layer (16). A second P-type region (22), characterized by a high dopant concentration at the substrate surface and a uniform junction profile, is formed in the substrate adjacent to the first P-type region by diffusing boron atoms from the material layer (17) through the dielectric layer (16) and into the substrate (15). The second P-type region (22) has a very shallow junction depth which is closer to the substrate surface than the first P-type region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.