Second-harmonic generation in semiconductor heterostructures
US5408110A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 1993 |
| Grant date | Apr 18, 1995 |
| Priority date | — |
| Expiry date | Jun 28, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3202
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Quasi-phase matched (QPM) second-harmonic (SH) generation in the reflection geometry is described. The SH intensity can be strongly enhanced by spatially modulating the optical properties of the nonlinear medium. This type of quasi-phase matching is demonstrated using an Al.sub.0.8 Ga.sub.0.2 As/GaAs heterostructure designed for .lambda.=1.06 .mu.m incident light. The SH light intensity generated in reflection from the heterostructure is enhanced 70 times relative to the SH response of a homogeneous GaAs wafer. A Fabry-Perot resonant cavity design employs this structure to make thin films with extremely high SH generation efficiencies. This is of particular interest used in vertical cavity surface emitting lasers (VCSELs).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.