Semiconductor strain sensor having improved resistance to bonding strain effects
US5408112A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 1993 |
| Grant date | Apr 18, 1995 |
| Priority date | — |
| Expiry date | Jul 14, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/10253
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor strain sensor includes a base, a peripheral section, a central section and a flexible beam. The peripheral section is bent to the base. Bonding strain is generated at a bonding portion between the base and the peripheral section. The central section extends from the peripheral section. The flexible beam extends from the central section and includes a strain detecting element. The strain detecting element changes its electric characteristic when strain is applied thereto. A thickness of the flexible beam is thinner than that of the central section. The bonding strain is transmitted from the bonding portion to the strain detecting element through a transmission path. The transmission path is bent. The bonding strain is attenuated because it is dispersed at a bending portion of the transmission path. The sensor accurately detects the strain to be detected without a bad influence of the bonding strain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.