High sensitivity improved photoelectric imaging device with a high signal to noise ratio
US5408113A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jun 28, 1993 |
| Grant date | Apr 18, 1995 |
| Priority date | — |
| Expiry date | Jun 28, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A photoelectric transfer device includes at least one photoelectric transfer cell having the following elements: A photoelectric transfer element generates a photoelectric current based on a quantity of incident light. An amplifier element includes first FET and functions as a source follower in which a source voltage of the first FET is varied so as to follow up a gate voltage thereof. A read unit outputs, as an output signal, the source voltage of the source follower. The photoelectric transfer element is connected to a gate and source of the amplifier element so that a voltage between the gate and source of the amplifier element is applied across the photoelectric transfer element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.