Sensed current driving device
US5408141A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 4, 1993 |
| Grant date | Apr 18, 1995 |
| Priority date | — |
| Expiry date | Jan 4, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/659
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An integrated power device comprises a power transistor (26) and a plurality of sense transistors (38), (40), (42), (44), and (46). Sense transistors (38), (40), (42), and (44) are constructed around the periphery of the active area occupied by power transistor (26). Sense transistor (46) is located within the interior of the active area occupied by power transistor (26) and contact is made to the necessary source region (64) of transistor (46) using a second level of metal interconnect to form a source contact (74).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.