Semiconductor laser
US5408487A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 1994 |
| Grant date | Apr 18, 1995 |
| Priority date | — |
| Expiry date | Mar 17, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2302/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A group III-V compound semiconductor laser of a 1 .mu.m band having an excellent conversion efficiency and a high characteristic temperature. The semiconductor laser can emit light in a 1.3 .mu.m band or a 1.55 .mu.m, and has a laser structure including an active layer For emitting light, guide layers sandwiching the active layer and having a band gap larger than the active layer, and clad layers embracing the guide layers and having a band gap larger than the guide layers. The lattice constants of the guide layers and clad layers are larger than a1 by 0.5% or more and smaller than a2 by 0.5% or more, where a1 represents the lattice constant of GaAs and a2 is the lattice constant of InP.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.