Pressure detecting circuit for semiconductor pressure sensor
US5408885A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 6, 1993 |
| Grant date | Apr 25, 1995 |
| Priority date | — |
| Expiry date | Apr 6, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/10158
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A pressure detecting circuit compensating for temperature dependency of a zero point output voltage of a semiconductor pressure sensor. A differential amplifier circuit in a signal processing circuit of the semiconductor pressure sensor includes two transistors. Emitter currents in the two transistors are different in accordance with the temperature dependency of the zero point output voltage of a bridge circuit of a pressure detector. As a result, a difference will arise between the base-emitter voltages of the two transistors. The temperature dependency of the zero point output voltage of the bridge circuit is compensated for by the temperature dependency of the voltage differences of the base-emitter voltages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.