PECVD process for forming BPSG with low flow temperature
US5409743A · kind A · utility
17Cited by
9References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 14, 1993 |
| Grant date | Apr 25, 1995 |
| Priority date | — |
| Expiry date | May 14, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a BPSG film in a PECVD reactor with ratios of P.sub.2 O.sub.3 /P.sub.2 O.sub.5 such that the film flows at low temperature in a non-oxidizing ambient and produces a reduced number of particulates. The method permits tailoring of the wall angle of a BPSG film by controlling the P.sub.2 O.sub.3 /P.sub.2 O.sub.5 ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.