Exposure mask comprising translucent and transparent phase shifters
US5409789A · kind A · utility
20Cited by
0References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 15, 1993 |
| Grant date | Apr 25, 1995 |
| Priority date | — |
| Expiry date | Jul 15, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/32
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This invention provides an exposure mask having mask patterns formed on a transparent substrate, the mask patterns including translucent phase shift patterns having a light path length for exposure light differentiated by 180.degree. from that of transparent areas of said transparent substrate and transparent phase shift patterns. Such an exposure mask can be advantageously used to realize highly defined patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.