Reflection preventing film and process for forming resist pattern using the same
US5410005A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 1993 |
| Grant date | Apr 25, 1995 |
| Priority date | — |
| Expiry date | Aug 13, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/091
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A reflection preventing film comprising a copolymer, its salt or both of them, the copolymer having at least one recurring unit selected from the group consisting of recurring units represented by formulas (1) and (2) and at least one recurring unit represented by formula (3): ##STR1## wherein R.sup.1 -R.sup.4 which may be the same as or different from one another, represent hydrogen atoms or organic groups and X represents a carboxyl group or a sulfo group, ##STR2## wherein R.sup.5 represents a hydrogen atom or an organic group, A represents a fluoroalkyl group and Y represents an alkylene group or a fluoroalkylene group. The reflection preventing film is formed on a resist film before irradiation in the formation of a resist pattern, thereby preventing the radiation reflected on the substrate from re-reflecting at the upper interface of the resist film to provide a resist pattern excellent in resolution, developability and pattern form.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.