Contact structure of semiconductor device and method of manufacturing the same
US5410183A · kind A · utility
8Cited by
2References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 15, 1994 |
| Grant date | Apr 25, 1995 |
| Priority date | — |
| Expiry date | Jul 15, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A contact structure of a semiconductor device comprises a lamination of at least first insulating film, first conductive film and second insulating film formed in that order a through hole formed to penetrate through at least the first insulating film and the first conductive film so that a cross-section of the first conductive film is exposed to the through-hole and a second conductive film formed on an inner surface of the through-hole so that the second conductive film electrically contacts with the cross-section of the first conductive film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.