III-V based integrated circuits having low temperature growth buffer or passivation layers
US5411914A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 1992 |
| Grant date | May 2, 1995 |
| Priority date | — |
| Expiry date | May 15, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/971
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new III-V buffer or passivation material is described which is produced by low temperature growth (LTG) of III-V compounds. The material has unique and desirable properties, particularly for closely spaced, submicron gate length active III-V semiconductor FET devices, such as HEMT's, MESFET's and MISFET's. The LTG material is grown under ambient conditions which incorporate an excess of the more volatile of the III-V species into the grown material. The new material is crystalline, highly resistive, relatively insensitive to light, and can be overgrown with high quality III-V active layers or used as a passivation material to insulate and protect active device structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.