Tunable heavy and light hole coupled bands in variable-strain quantum well semi-conductor heterostructure for novel opto-electronic devices
US5412225A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 1994 |
| Grant date | May 2, 1995 |
| Priority date | — |
| Expiry date | Feb 18, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/01766
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An opto-electronic semiconductor device including a variable strained layered quantum well structure having at least two superimposed heavy- and light-hole triangular bottom valance band quantum wells with mutually opposite slopes. Upon the application of a bias potential across a thickness dimension of the quantum wells, an electric field is generated therethrough which produces an interchange of the confined energy levels of heavy-holes and light-holes in the quantum wells which causes a change in the transmission characteristics of light passing through the device as a result of the heavy- and light-hole energy bands having different light absorption anisotropy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.