Semi-conductor structures
US5412226A · kind A · utility
13Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 1994 |
| Grant date | May 2, 1995 |
| Priority date | — |
| Expiry date | Oct 11, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An opto-electronic component comprises a substrate of InP (4, 5) with stacks of quantum wells (6) grown on both surfaces of the substrate. Layers (7) of n doped InP having p-doped regions (8) are formed on the outer surface of the quantum well structures. In use, voltages V1 and V2 may be applied to electrodes (1) enabling the component to be used for a number of applications, e.g. as a detector/modulator pair, in close coupled arrays of modulators, etc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.