Electrically-programmable low-impedance anti-fuse element
US5412244A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1993 |
| Grant date | May 2, 1995 |
| Priority date | — |
| Expiry date | Apr 29, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Electrically-programmable low-impedance antifuses are disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The antifuses of the present invention include a first conductive electrode which may be formed as a diffusion region in a semiconductor substrate or may be formed from a semiconductor material, such as polysilicon, located above and insulated from the substrate. A dielectric layer is disposed over the first electrode. A second electrode is formed over the dielectric layer from a semiconductor material such as polysilicon, or metal having a barrier metal underneath. At least one of the two electrodes of each antifuse is highly-doped or implanted with arsenic such that high concentrations of arsenic exist at the interface between the electrode and the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.